Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1995-09-26
1999-08-31
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
427569, 427571, 438729, 438732, 20419231, 20419232, 20429837, 20429816, 156345, 118723E, H05H 100
Patent
active
059450088
ABSTRACT:
The present invention provides a method for plasma control, in which an electric field is generated in the direction perpendicular to the surface of an object to be processed in plasma atmosphere generated in a processing chamber and another electric field is generated in the direction parallel to the surface, and the direction of ion or electron in plasma atmosphere is controlled by controlling the composite electric field composed of both the electric fields. The invention provides also an apparatus for plasma control provided with a perpendicular electric field generating means for generating an electric field in the direction perpendicular to the surface of the object, and a parallel electric field generating means for generating an electric field in the direction parallel to the surface of the object.
REFERENCES:
patent: 4740268 (1988-04-01), Bukhman
patent: 5431769 (1995-07-01), Kisakibaru et al.
patent: 5444207 (1995-08-01), Sekine et al.
patent: 5534108 (1996-07-01), Quian et al.
Bannai Satoshi
Chiba Tomohiro
Honbori Isao
Kato Yasushi
Kawashima Toshitaka
Dang Thi
Sony Corporation
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