Method and apparatus for physical-vapor deposition of material l

Details Method and apparatus for physical-vapor deposition of material l Method and apparatus for physical-vapor deposition of material l

1994-01-26

1994-10-11

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429816, 20429819, 2042982, 20429817, C23C 1434, C23C 1435

Patent

active

053544439

ABSTRACT:
An apparatus for physical-vapor deposition of material layers includes a distributed electron cyclotron resonance (ECR) plasma processing device (12) having a process chamber (14) and a plasma formation region (18). A magnetron target stage (19) connects to a sputtering target material (20) in fluid communication with the process chamber (14) and with the plasma formation region (18) and substantially within the line of sight or view angle of a semiconductor substrate (16). The magnetron target stage (19) induces particles to separate from the sputtering target material (20) and move into the process chamber (14) for subsequent deposition onto the semiconductor substrate (16).

REFERENCES:
patent: 4610770 (1986-09-01), Saito et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 4996077 (1991-02-01), Moslehi et al.
patent: 5006219 (1991-04-01), Latz et al.
patent: 5230784 (1993-07-01), Yoshida
patent: 5232569 (1993-08-01), Nelson et al.

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