Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Yield
Reexamination Certificate
2011-08-09
2011-08-09
Siek, Vuthe (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Design of semiconductor mask or reticle
Yield
C716S053000, C716S054000, C716S055000
Reexamination Certificate
active
07996795
ABSTRACT:
A method, a computer medium storing computer instructions performing a method, and a computer with processor and memory perform stress modeling as follows. The stress model transforms a representation of a material conversion of a first material in the integrated circuit to a second material in the integrated circuit. Prior to the material conversion the first material occupies a first space having a first boundary. After the material conversion the first material and the second material together occupy a second space having a second boundary. The first space and the second space are different. The stress model performed by the computer system transforms the representation of the material conversion of the first material to the second material into: i) the first material occupying the first space having the first boundary, and ii) a strain displacement condition of the first material. The strain displacement condition is determined by a spatial change from the first boundary to the second boundary.
REFERENCES:
B.E. Deal et al. “General Relationship for the Thermal Oxidation of Silicon” Journal of Applied Physics, vol. 36, No. 12, Dec. 1965, pp. 3770-3778.
Victor Moroz et al. “Modeling the Impact of Stress on Silicon Processes and Devices” Materials Science in Semiconductor Processing 6 (2003), pp. 27-36.
Moroz Victor
Xu Xiaopeng
Haynes Beffel & Wolfeld LLP
Ngo Brian
Siek Vuthe
Suzue Kenta
Synopsys Inc.
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