Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2006-11-21
2006-11-21
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
07138212
ABSTRACT:
A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.
REFERENCES:
patent: 6553562 (2003-04-01), Capodieci et al.
patent: 6792591 (2004-09-01), Shi et al.
patent: 6807662 (2004-10-01), Toublan et al.
patent: 6851103 (2005-02-01), Van Den Broeke et al.
patent: 2002/0166107 (2002-11-01), Capodieci et al.
patent: 2003/0082463 (2003-05-01), Laidig et al.
patent: 2004/0003368 (2004-01-01), Hsu et al.
patent: 2004/0005089 (2004-01-01), Robles et al.
patent: 2004/0139418 (2004-07-01), Shi et al.
patent: 2005/0102648 (2005-05-01), Hsu et al.
Eurlings et al., “0.11 μm imaging in KrF lithography using dipole illumination”, Lithography for Semiconductor Manufacturing II, Proceedings of SPIE, vol. 4404 (2001) pp. 266-278.
Hsu et al., “65 nm Full-Chip Implementation Using Double Dipole Lithography”, Proceedings of SPIE, Bellingham, VA, vol. 5040, No. 1, Feb. 25, 2003, pp. 215-231, XP 009024366.
Hsu et al., “Dipole decomposition mask design for full-chip implementation at 100nm technology node and beyond”, Proceedings of The SPIE, Bellingham, VA, vol. 4691, Mar. 5, 2002, pp. 476-490, XP 002261072.
Torres et al., “Model-assisted double dipole decomposition”, Proceedings of The SPIE, Bellingham, VA, vol. 4691, Mar. 5, 2002, pp. 407-417, XP 002257323.
Torres et al., “Alternatives to alternating phase shift masks for 65nm” Proceedings of The SPIE—The International Society for Optical Engineering SPIE-INT. Soc. Opt. Eng, vol. 4889, Oct. 1, 2002, pp. 540-550, XP002320776.
Nam, “Patterning 220nm Pitch DRAM Patterns by Using Double Mask Exposure”, Proceedings of SPIE, vol. 4000, (Mar. 2000), pp. 283-292.
Finders et al., “Can DUV take us below 100 nm?” Proceedings of SPIE, vol. 4346, (2000), pp. 153-165.
Kim et al., “Feasiblility Study of Printing Sub 100 nm with ArF Lithography”, Proceedings of SPIE, vol. 4346, (2000), pp. 214-221.
Chen Jang Fung
Corcoran Noel
Eurlings Markus Franciscus Antonius
Hsu Duan-Fu Stephen
Wampler Kurt E.
ASML Masktools B.V.
Rosasco S.
LandOfFree
Method and apparatus for performing model-based layout... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for performing model-based layout..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for performing model-based layout... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3655400