Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2007-04-06
2010-11-02
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S311000, C716S030000
Reexamination Certificate
active
07824826
ABSTRACT:
A method of generating complementary dark field masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.This method is enabled by a non-transitory computer readable medium configured to store program instructions for execution by a processor. The complementary dark field masks are used for patterning a layer of radiation-sensitive material in a device manufacturing method.
REFERENCES:
patent: 5229872 (1993-07-01), Mumola
patent: 5296891 (1994-03-01), Vogt et al.
patent: 5446521 (1995-08-01), Hainsey et al.
patent: 5523193 (1996-06-01), Nelson
patent: 5546225 (1996-08-01), Shiraishi
patent: 5841517 (1998-11-01), Tanibata
patent: 5881125 (1999-03-01), Dao
patent: 5969441 (1999-10-01), Loopstra et al.
patent: 6046792 (2000-04-01), Van der Werf et al.
patent: 6255024 (2001-07-01), Pierrat
patent: 6268091 (2001-07-01), Pierrat
patent: 6553562 (2003-04-01), Capodieci et al.
patent: 6671035 (2003-12-01), Eurlings et al.
patent: 6745380 (2004-06-01), Bodendorf et al.
patent: 6792591 (2004-09-01), Shi et al.
patent: 6807662 (2004-10-01), Toublan et al.
patent: 6811954 (2004-11-01), Fukuda
patent: 6851103 (2005-02-01), Van Den Broeke et al.
patent: 6855486 (2005-02-01), Finders et al.
patent: 6875545 (2005-04-01), Eurlings
patent: 6915505 (2005-07-01), Hsu et al.
patent: 7138212 (2006-11-01), Hsu et al.
patent: 7246342 (2007-07-01), Hsu et al.
patent: 7666554 (2010-02-01), Hsu et al.
patent: 7681171 (2010-03-01), Chen et al.
patent: 2002/0166107 (2002-11-01), Capodieci et al.
patent: 2003/0082463 (2003-05-01), Laidig et al.
patent: 2004/0003368 (2004-01-01), Hsu et al.
patent: 2004/0005089 (2004-01-01), Robles et al.
patent: 2004/0139418 (2004-07-01), Shi et al.
patent: 2005/0102648 (2005-05-01), Hsu et al.
patent: 2006/0277521 (2006-12-01), Chen
patent: 2008/0020296 (2008-01-01), Hsu et al.
patent: 1 091 252 (2001-04-01), None
patent: 1 152 289 (2001-11-01), None
patent: 1 308 780 (2003-05-01), None
patent: 1420294 (2005-05-01), None
patent: 9-288345 (1997-11-01), None
patent: 2001-126983 (2001-05-01), None
patent: 2001-203139 (2001-07-01), None
patent: 2001-222097 (2001-08-01), None
patent: 2001-223155 (2001-08-01), None
patent: WO 98/40791 (1998-09-01), None
patent: WO 01/63653 (2001-08-01), None
Eurlings et al., “0.11 μm imaging in KrF lithography using dipole illumination”, Proceedings of SPIE, vol. 4404 (2001) pp. 266-278.
Hsu et al., “65 nm Full-Chip Implementation Using Double Dipole Lithography”, Proceedings of SPIE, Bellingham, VA, vol. 5040, No. 1, Feb. 25, 2003, pp. 215-231, XP 009024366.
Hsu et al., “Dipole decomposition mask design for full-chip implementation at 100nm technology node and beyond”, Proceedings of The SPIE, Bellingham, VA, vol. 4691, Mar. 5, 2002, pp. 476-490, XP 002261072.
Torres et al., “Model-assisted double dipole decomposition”, Proceedings of The SPIE, Bellingham, VA, vol. 4691, Mar. 5, 2002, pp. 407-417, XP 002257323.
Torres, J.A., et al. Proceedings of the SPIE, (2002) ISSN: 0277-786X.
Nam, “Patterning 220nm Pitch DRAM Patterns by Using Double Mask Exposure”, Proceedings of SPIE, vol. 4000, (Mar. 2000), pp. 283-292.
Finders et al., “Can DUV take us below 100 nm?” Proceedings of SPIE, vol. 4346, (2000), pp. 153-165.
Kim et al., “Feasibility Study of Printing Sub 100 nm with ArF Lithography”, Proceedings of SPIE, vol. 4346, (2000), pp. 214-221.
“Mask Topography Effects in Projection Printing of Phase-Shifting Masks”, Alfred K. Wong and Andrew R. Neureuther, Fellow, IEEE Transactions on Electron Devices, vol. 41, No. 6, Jun. 1994.
“Spatial Frequency Doubling Lithography (SFDL) of Periodic Structures for Integrated Optical Circuit Technology”, Tanya E. Jewell and Donald L. White. Journal of Lightwave Technology, vol. 7, No. 9, Sep. 1989.
Broeke Douglas Van Den
Chen Jang Fung
Hsu Duan-Fu Stephen
Park Sang-bong
ASML MaskTools B.V.
Huff Mark F
Pillsbury Winthrop Shaw & Pittman LLP
Ruggles John
LandOfFree
Method and apparatus for performing dark field double dipole... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for performing dark field double dipole..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for performing dark field double dipole... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4251550