Method and apparatus for performing a double shift print on a su

Details Method and apparatus for performing a double shift print on a su Method and apparatus for performing a double shift print on a su

1996-12-20

1999-10-26

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430394, 430396, G03F 720

Patent

active

059725672

ABSTRACT:
A method and apparatus for printing a feature having a reduced critical dimension on a photoresist-coated semiconductor wafer are disclosed. The method comprises the steps of positioning the wafer relative to the reticle at a first shifted position, exposing a first region of the wafer to radiant energy through a pattern transfer tool to define a first side of the feature, positioning the wafer relative to the pattern transfer tool at a second shifted position, and exposing a second region of the wafer to radiant energy through the pattern transfer tool to define a second side of the feature.

REFERENCES:
patent: 5281996 (1994-01-01), Bruning et al.
patent: 5503959 (1996-04-01), Langston
Silicon Processing For The VLSI Era, vol. 1--Process Technology, S. Wolf and R.N. Tauber, pp. 407-492.
"Product Description for the Micrascan II", pp. 1-1--4-4, Nov. 11, 1994.
"The Ultimate Lithography Solution For 0.5 .mu.m to 0.25 .mu.m", 4 pages., 1992.

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