Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-23
2007-01-23
Tran, Long (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21182, C257SE21207, C257S408000, C438S286000
Reexamination Certificate
active
10924650
ABSTRACT:
A method and apparatus is presented that provides performance enhancement in a semiconductor device. In one embodiment, a first current region (64, 76, 23), a channel region and a second current region (75, 33, 66) are adjacent each other. The second current region (75, 33, 66) has a content of a first element of an alloy greater than a content of the first element in the first current region (64, 76, 23), wherein the second current region (75, 33, 66) has a content of the first element greater than a content of the first element in the channel region, the alloy further comprises a second element, the first element has a first valence number, and the second element has a second valence number. Furthermore, the sum of the first valence number and the second valence number is eight.
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Adams Vance H.
Liu Chun-Li
Orlowski Marius K.
Winstead Brian A.
Chiu Joanna G.
Freescale Semiconductor Inc.
Tran Long
Vo Kim-Marie
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