Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-10-09
1999-07-27
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438612, 438613, H01L 2144
Patent
active
059306661
ABSTRACT:
A semiconductor-chip is bonded to a chip-carrier substrate by way of a gold-to-gold bonding interface. A vacuum chuck is provided to physically hold the semiconductor-chip in physical contact with, the chip-carrier substrate as static force, ultrasonic power, and an elevated temperature are applied to two mating gold surfaces that are formed by two continuous and physically mating gold layers. The bonded assembly is encased in a potting ceramic, or the bonded assembly is encased in a housing that includes a transparent cover that enables use as an optoelectronic semiconductor device.
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Astralux, Incorporated
Collins Deven
Hancock Earl C.
Picardat Kevin M.
Sirr Francis A.
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