Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2006-07-04
2006-07-04
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Testing
C365S096000, C365S230060, C365S203000
Reexamination Certificate
active
07072233
ABSTRACT:
In the method for modifying a default time duration between an execution instant of a second operation and an earlier execution instant of a first operation executed earlier in a memory element, wherein the memory element is operable in a test operation mode and a normal operation mode, at first a real time duration in the memory element is determined and provided during the test operation mode, wherein the real time duration is chosen so that a performance parameter of the memory element, when using the real time duration between the execution instants of the first and second operations, improves over a situation in which the default time duration between the execution instants of the first and second operations is used. Then, the default time duration is changed in direction of the real time duration during the test operation mode to obtain a modified default time duration. Then information on the modified default time duration or on the ascertained real time duration are stored in the memory element during the test operation mode, wherein the second operation is executed offset by the modified default time duration after the execution instant of the first operation during the normal operation mode.
REFERENCES:
patent: 4575815 (1986-03-01), Delahunt
patent: 4669082 (1987-05-01), Tilghman et al.
patent: 5357471 (1994-10-01), Alapat
patent: 5946248 (1999-08-01), Chien et al.
patent: 2002/0048191 (2002-04-01), Ikehashi et al.
patent: 33 33 862 (1984-04-01), None
Brede Ruediger
Fischer Helmut
Savignac Dominique
Hoang Huan
Infineon - Technologies AG
Slater & Matsil L.L.P.
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