Method and apparatus for non-contact plasma polishing and smooth

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156639, 156657, 156662, 156345, H01L 21306, B44C 122

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active

053762240

ABSTRACT:
A plasma is used in conjunction with a plasma assisted chemical etching material removal tool 10 to rapidly and precisely polish and smooth a substrate without mechanically contacting the surface. The pressure of a process gas, which disassociates into reactive plasma species in the presence of an applied radio frequency field, is controlled so as to allow the selection of a primarily unidirectional or a primarily omnidirectional polishing and smoothing mechanism.

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Jurgensen, Sheath Collision Processes Controlling The Energy And directionality of Surface bombardment in O.sub.2 reactive ion etching, J. Appl. Phys. 64(2), 15 Jul. 1988, pp. 590-597.
Eisele of SiO.sub.2 in a Narrowly Confined Plasma of High Power density, J. Vac. Sci. Technol. B4(5), Sep./Oct. 1986, pp. 1227-1232.

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