Method and apparatus for monitoring processes using multiple par

Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed

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438 14, 438 17, G01R 3126, H01L 2166

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active

059100117

ABSTRACT:
A method and apparatus that provides process monitoring within a semiconductor wafer processing system using multiple process parameters. Specifically, the apparatus analyzes multiple process parameters and statistically correlates these parameters to detect a change in process characteristics such that the endpoint of an etch process may be accurately detected, as well as detecting other characteristics within the chamber. The multiple parameters may include optical emissia, environmental parameters such as pressure and temperature within the reaction chamber, RF power parameters such as reflected power or tuning voltage, and system parameters such as particular system configurations and control voltages.

REFERENCES:
patent: 4198261 (1980-04-01), Busta et al.
patent: 4208240 (1980-06-01), Latos
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4953982 (1990-09-01), Ebbing et al.
patent: 5320880 (1994-06-01), Sandhu et al.
patent: 5362356 (1994-11-01), Schoenborn
patent: 5362969 (1994-11-01), Glenn
patent: 5406080 (1995-04-01), Friedhelm
patent: 5444637 (1995-08-01), Smesny et al.
patent: 5467013 (1995-11-01), Williams et al.
patent: 5479340 (1995-12-01), Fox et al.
patent: 5497331 (1996-03-01), Iriki et al.
patent: 5536359 (1996-07-01), Kawada et al.
patent: 5635409 (1997-06-01), Moslehi
patent: 5739051 (1998-04-01), Saito
F. Heinrich, P. Kopperschidt, "Online Uniformity Measurements In Large Area Plasma Assisted Etching and Deposition", Proceedings of the 10th Intern. Colloquium on Plasma Processes CIP'95, Antibes, France, Jun. 11-15, 1995.

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