Method and apparatus for monitoring processes using multiple par

Details Method and apparatus for monitoring processes using multiple par Method and apparatus for monitoring processes using multiple par

1997-05-12

1999-06-08

Picardat, Kevin M.

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

438 14, 438 17, G01R 3126, H01L 2166

Patent

active

059100117

ABSTRACT:
A method and apparatus that provides process monitoring within a semiconductor wafer processing system using multiple process parameters. Specifically, the apparatus analyzes multiple process parameters and statistically correlates these parameters to detect a change in process characteristics such that the endpoint of an etch process may be accurately detected, as well as detecting other characteristics within the chamber. The multiple parameters may include optical emissia, environmental parameters such as pressure and temperature within the reaction chamber, RF power parameters such as reflected power or tuning voltage, and system parameters such as particular system configurations and control voltages.

REFERENCES:
patent: 4198261 (1980-04-01), Busta et al.
patent: 4208240 (1980-06-01), Latos
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4953982 (1990-09-01), Ebbing et al.
patent: 5320880 (1994-06-01), Sandhu et al.
patent: 5362356 (1994-11-01), Schoenborn
patent: 5362969 (1994-11-01), Glenn
patent: 5406080 (1995-04-01), Friedhelm
patent: 5444637 (1995-08-01), Smesny et al.
patent: 5467013 (1995-11-01), Williams et al.
patent: 5479340 (1995-12-01), Fox et al.
patent: 5497331 (1996-03-01), Iriki et al.
patent: 5536359 (1996-07-01), Kawada et al.
patent: 5635409 (1997-06-01), Moslehi
patent: 5739051 (1998-04-01), Saito
F. Heinrich, P. Kopperschidt, "Online Uniformity Measurements In Large Area Plasma Assisted Etching and Deposition", Proceedings of the 10th Intern. Colloquium on Plasma Processes CIP'95, Antibes, France, Jun. 11-15, 1995.

Affiliated with

Also associated with

Rating

Method and apparatus for monitoring processes using multiple par does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for monitoring processes using multiple par, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for monitoring processes using multiple par will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1680476