Method and apparatus for monitoring CVD liquid source for formin

Details Method and apparatus for monitoring CVD liquid source for formin Method and apparatus for monitoring CVD liquid source for formin

1998-06-02

2000-09-12

Talbot, Brian K.

Coating processes

Measuring, testing, or indicating

Thickness or uniformity of thickness determined

427 79, 4271263, 42725519, 42725528, 42725532, 438 14, B05D 512, C23C 1606

Patent

active

061174823

ABSTRACT:
An object is to provide a method of monitoring a CVD liquid source for forming a thin film having a high dielectric constant, which allows detection of the concentration abnormality and the deterioration of the CVD liquid source. First, the CVD liquid source used as a sources of chemical vapor deposition is prepared by dissolving an organometallic compound of dipivaloyolmethane type in an organic solvent. Secondly, a spectroscopy of the CVD liquid source is performed.

REFERENCES:
patent: 3670172 (1972-06-01), Golden
patent: 5372850 (1994-12-01), Uchikawa et al.
patent: 5776254 (1998-07-01), Yuuki et al.
"Surface Morphologies and Electrical Properties of (Ba, Sr)TiO.sub.3 Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition", T. Kawahara et al., Jpn. J. Appln. Phys. vol. 34 (1995) pp. 5077-5082.

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