Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-18
2011-01-18
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29226, C257S192000
Reexamination Certificate
active
07872311
ABSTRACT:
A method and apparatus is presented that provides mobility enhancement in the channel region of a transistor. In one embodiment, a channel region (18) is formed over a substrate that is bi-axially stressed. Source (30) and drain (32) regions are formed over the substrate. The source and drain regions provide an additional uni-axial stress to the bi-axially stressed channel region. The uni-axial stress and the bi-axially stress are both compressive for P-channel transistors and tensile for N-channel transistors. Both transistor types can be included on the same integrated circuit.
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Orlowski Marius K.
Venkatesan Suresh
Clingan, Jr. James L.
Dickey Thomas L
Erdem Fazli
Freescale Semiconductor Inc.
Hill Daniel D.
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