Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1985-08-23
1988-01-26
Niebling, John F.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041921, 204298, C23C 1434
Patent
active
047215534
ABSTRACT:
Disclosed herein are apparatuses of several types for forming a film at an increased rate that is necessary for putting the microwave assisting sputtering into practice on an industrial scale. The feature resides in that a plasma is maintained uniformly on the whole surface of target composed of a material to be sputtered. This makes it possible to avoid the target from being thermally destroyed by the increased energy of sputtering. Further, in order to prevent damage on a substrate on which the film is to be sputtered by plasma for sputtering, consideration is given to the arrangement of magnetic devices in order to form the film by positively introducing the plasma onto the substrate on which the film is to be formed and, at the same time, effecting the sputtering. There are further disclosed an apparatus in which the plasma is generated by microwaves at a position close to the target to effectively utilize the energy of microwaves for the sputtering, and a cathode structure on which a conical target is placed by taking into consideration the fact that the sputtered particles emitted from the target travel in compliance with the cosine law.
REFERENCES:
patent: 4265730 (1981-05-01), Hirose et al.
patent: 4282267 (1981-08-01), Kuyel
patent: 4298419 (1981-11-01), Suzuki et al.
patent: 4384933 (1983-05-01), Takasaki
patent: 4492620 (1985-01-01), Matsuo et al.
patent: 4525262 (1985-06-01), Class et al.
patent: 4534842 (1985-08-01), Armal et al.
patent: 4610770 (1986-09-01), Saito et al.
Aiuchi Susumu
Saito Hiroshi
Sano Shuuzoo
Shimizu Tamotsu
Suzuki Yasumichi
Hitachi , Ltd.
Nguyen Nam X.
Niebling John F.
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