Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2007-05-10
2010-11-09
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S050000, C438S106000, C438S700000, C438S701000, C438S084000, C257S415000, C257SE29070, C174S354000, C174S367000
Reexamination Certificate
active
07829363
ABSTRACT:
Disclosed are apparatus and methods that provide for electrical contacts in a substrate. For example, the apparatus may comprise a trench formed in a substrate, with an electrical contact pad formed on interior walls of the trench that comprises a narrowed opening. A conductive wire is squeezed into the trench that is secured by mechanical stress resulting from material deformation. One exemplary method comprises depositing metal on walls of the trench such that a narrowed opening is provided, and disposing a conductive wire in the trench so that it contacts the deposited metal and is secured by mechanical stress resulting from material deformation. Another exemplary method comprises providing a substrate having a trench formed therein, placing a conductive wire in the trench, and depositing metal atoms into the trench to bury the wire and provide exposed metal on a surface of the substrate.
REFERENCES:
patent: 4297565 (1981-10-01), Parr
patent: 4414607 (1983-11-01), Sekido et al.
patent: 5708251 (1998-01-01), Naveh
patent: 5846854 (1998-12-01), Giraud et al.
patent: 6053743 (2000-04-01), Mitchell et al.
patent: 6855115 (2005-02-01), Fonseca et al.
patent: 2003/0136417 (2003-07-01), Fonseca et al.
patent: 2005/0187482 (2005-08-01), Fonseca et al.
patent: 2006/0177956 (2006-08-01), O'Brien et al.
patent: 2006/0241354 (2006-10-01), Allen et al.
patent: 2006/0287602 (2006-12-01), O'Brien et al.
U.S. Appl. No. 10/215,377, filed Aug. 7, 2002, Fonseca, et al.
U.S. Appl. No. 10/215,379, filed Aug. 7, 2002, Fonseca, et al.
Ballard Spahr LLP
CardioMEMS, Inc.
Landau Matthew C
Snow Colleen E
LandOfFree
Method and apparatus for microjoining dissimilar materials does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for microjoining dissimilar materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for microjoining dissimilar materials will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4191885