Optics: measuring and testing – By light interference – For dimensional measurement
Reexamination Certificate
2006-10-10
2006-10-10
Toatley, Jr., Gregory J. (Department: 2877)
Optics: measuring and testing
By light interference
For dimensional measurement
Reexamination Certificate
active
07119908
ABSTRACT:
A manufacturing method and manufacturing device for high-precision thin film devices is disclosed, whereby the film thickness and film thickness distribution of a transparent film is measured to a high degree of accuracy during a CMP process without being affected by the film thickness distribution between LSI regions or within the semiconductor wafer surface generated by CMP processing. Film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity, or the like, thereby permitting highly accurate control of film thickness. The leveling process in CMP processing can be optimized on the basis of the film thickness distribution. The film deposition conditions in the film deposition stage and the etching conditions in the etching stage can also be optimized. Accordingly, a high-precision semiconductor device can be manufactured.
REFERENCES:
patent: 5087121 (1992-02-01), Kakuchi et al.
patent: 6004187 (1999-12-01), Nyui et al.
patent: 6159073 (2000-12-01), Wiswesser et al.
patent: 6271047 (2001-08-01), Ushio et al.
patent: 6425801 (2002-07-01), Takeishi et al.
patent: 6503361 (2003-01-01), Nyui et al.
patent: 6551172 (2003-04-01), Nyui et al.
patent: 6670200 (2003-12-01), Ushio et al.
patent: 6963407 (2005-11-01), Abe et al.
patent: 2002/0197871 (2002-12-01), Hirose et al.
patent: 2003/0022400 (2003-01-01), Nomoto et al.
patent: 06-252113 (1994-09-01), None
patent: 09-007985 (1997-01-01), None
patent: 10-083977 (1998-03-01), None
patent: 10-294297 (1998-11-01), None
patent: 2000-077371 (2000-03-01), None
patent: 2000-310512 (2000-11-01), None
Hirose Takenori
Nomoto Mineo
Saito Keiya
Hitachi , Ltd.
Lyons Michael A.
Toatley , Jr. Gregory J.
Townsend and Townsend / and Crew LLP
LandOfFree
Method and apparatus for measuring thickness of thin film... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for measuring thickness of thin film..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for measuring thickness of thin film... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3705413