Method and apparatus for measuring the topography of a semicondu

Details Method and apparatus for measuring the topography of a semicondu Method and apparatus for measuring the topography of a semicondu

1993-01-04

1994-08-16

Anderson, Bruce C.

Radiant energy

Inspection of solids or liquids by charged particles

250307, H01J 3700

Patent

active

053389328

ABSTRACT:
The topography of a surface is measured by utilizing a probe (10, 20) having a variable flexibility and a conductive tip (14, 16). Using the conductive tip (14, 16), a first tunneling current is measured at a first point (36). The tip (14, 16) is moved to a second point (37) and a deflection force is measured. The measurements from the different points (36, 37, 38, 39, 40, 41) are combined to provide composite images of the surface's topography and material composition.

REFERENCES:
patent: 4724318 (1988-02-01), Binnig
patent: 4912822 (1990-04-01), Zdeblick et al.
patent: 5017266 (1991-05-01), Zdeblick et al.
patent: 5025658 (1991-06-01), Elings et al.
patent: 5051379 (1991-09-01), Bayer et al.
patent: 5144128 (1992-09-01), Hasegawa et al.
patent: 5162653 (1992-11-01), Hosaka et al.
patent: 5166520 (1992-11-01), Prater et al.
patent: 5189906 (1993-03-01), Elings et al.
patent: 5229606 (1993-07-01), Elings et al.
patent: 5253515 (1993-10-01), Toda et al.
patent: 5268571 (1993-12-01), Yamamoto et al.
R. Kliese et al. "Real-Time STM Investigation of the Initial Stages of Oxygen Interaction With Si(100)2X1", Ultramicrosscopy, vol. 42-44, pp. 824-831, 1992.
H. Haefke et al "Atomic Surface and Lattice Structures of AgBr Thin Films", Ultramicroscopy, vol. 42-44, pp. 290-297, 1992.

Affiliated with

Also associated with

Rating

Method and apparatus for measuring the topography of a semicondu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for measuring the topography of a semicondu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for measuring the topography of a semicondu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-953866