Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2007-05-01
2008-12-09
Geisel, Kara E (Department: 2877)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
Reexamination Certificate
active
07462293
ABSTRACT:
An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
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patent: 2002/0114123 (2002-08-01), Nishio et al.
patent: 2000-100599 (2000-04-01), None
Koshimizu Chishio
Matsumoto Naoki
Yamazawa Yohei
Geisel Kara E
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
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