Method and apparatus for measuring electron density of...

Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting

Reexamination Certificate

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Reexamination Certificate

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07462293

ABSTRACT:
An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

REFERENCES:
patent: 6861844 (2005-03-01), Verdeyen et al.
patent: 2002/0047543 (2002-04-01), Sugai et al.
patent: 2002/0114123 (2002-08-01), Nishio et al.
patent: 2000-100599 (2000-04-01), None

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