Method and apparatus for measuring dopant profile of a...

Details Method and apparatus for measuring dopant profile of a... Method and apparatus for measuring dopant profile of a...

2005-05-17

2005-05-17

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S014000, C324S765010, C324S762010

Reexamination Certificate

active

06893884

ABSTRACT:
A method and apparatus for measuring dopant profile of a semiconductor is disclosed. Initially, the temperature of a tip of a probe and the temperature of a semiconductor sample are ascertained. Then, a voltage at a location on a surface of the semiconductor sample is obtained via the tip of the probe. The dopant concentration at the location of the surface of the semiconductor sample is subsequently determined by combining the obtained voltage and the temperature difference between the probe tip and the semiconductor sample. The above-mentioned steps can be repeated in order to generate a dopant profile of the semiconductor.

REFERENCES:
patent: 6171959 (2001-01-01), Nagabushnam
patent: 6467951 (2002-10-01), Ghoshal
Williams et al., “Microscopy of Chemical-Potential Variations on an Atomic Scale”, Nature, vol. 344, p. 317-319 (1990).

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