Method and apparatus for measuring a surface profile of a...

Semiconductor device manufacturing: process – With measuring or testing

Reexamination Certificate

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C257SE21529, C257SE21521

Reexamination Certificate

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07405089

ABSTRACT:
In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

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patent: 2005/0089774 (2005-04-01), Choi et al.
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Heidari, Babak et al., “Large Scale Nanolithography using Nanoimprint Lithography,” American Vacuum Society, J. Vac. Sci. Technol. B 17(6), pp. 2961-2964, (Nov./Dec. 1999).
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