Method and apparatus for measuring a lifetime of charge...

Details Method and apparatus for measuring a lifetime of charge... Method and apparatus for measuring a lifetime of charge...

2011-08-30

2011-08-30

Phan, Huy Q (Department: 2858)

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Distributive type parameters

C324S637000, C324S501000, C250S585000, C250S339060

Reexamination Certificate

active

08008929

ABSTRACT:
An apparatus for measuring a lifetime of charge carriers that has a measuring probe and a component for directing ultraviolet radiation to a measuring position. The measuring probe also includes at least one electrode provided at a predetermined spatial relationship to the measuring position. A microwave source is adapted to direct microwave radiation to the measuring position, a microwave detector is adapted to measure an alteration of an intensity of microwave radiation reflected at the measuring position in response to the ultraviolet radiation and a semiconductor structure holder is adapted to receive a semiconductor structure and to provide an electric contact to a portion of the semiconductor structure. Additionally, a device for moving the substrate holder relative to the measuring probe is provided for positioning at least one portion of the semiconductor structure at the measuring position. The apparatus includes a power source adapted to apply a bias voltage between the semiconductor structure holder and the electrode.

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International Search Report, PCT/EP2008/007340, mailed Oct. 20, 2008.
Rehwald, W. et al., “An Instrument for Contactless Lifetime Measurements in Semiconductor Layers of Silicon-on-Insulator (SOI) Materials”, Semiconductor Science and Technology, vol. 6, pp. 735-742, (1991).

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