Method and apparatus for manufacturing silicon single crystals

Details Method and apparatus for manufacturing silicon single crystals Method and apparatus for manufacturing silicon single crystals

1989-04-26

1992-02-11

Straub, Gary P.

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

422248, 1566171, 1566204, 156DIG64, 156DIG83, 156DIG115, C30B 3500, C30B 2906, C30B 1502

Patent

active

050874292

ABSTRACT:
The present invention relates to a method and apparatus for manufacturing silicon single crystals by the Czochralski method, including the steps of dividing a crucible containing molten silicon into an inner single crystal growing section and an outer material feeding section to allow said molten silicon to move slowly, and pulling a silicon single crystal from said single crystal growing section while continuously feeding silicon starting material to said material feeding section, the improvement wherein temperatures of said material feeding section and said molten silicon are maintained higher than a melting point of silicon by at least more than 12.degree. C.

REFERENCES:
patent: 2892739 (1954-10-01), Rusler
patent: 3265469 (1964-09-01), Hall
patent: 4238274 (1980-12-01), Chu et al.
patent: 4389377 (1983-06-01), Duncan et al.
patent: 4659421 (1987-04-01), Jewett
patent: 4786479 (1988-11-01), Hundal et al.

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