Method and apparatus for manufacturing semiconductor devices

Details Method and apparatus for manufacturing semiconductor devices Method and apparatus for manufacturing semiconductor devices

2006-10-13

2011-10-11

Everhart, Caridad (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S790000, C257SE21010, C427S255150

Reexamination Certificate

active

08034727

ABSTRACT:
A semiconductor device manufacturing method according to the present invention uses a first raw material gas containing Si, a second raw material gas containing a metal element M and an oxidation gas, in which a first step of supplying the oxidation gas onto a substrate to be treated, and a second step of supplying the first raw material gas are sequentially performed. The method further includes, after the first and second steps, a step of supplying the second raw material gas or gas mixture of the first raw material gas and the second raw material gas.

REFERENCES:
patent: 6806211 (2004-10-01), Shinriki et al.
patent: 7396565 (2008-07-01), Yang et al.
patent: 7402534 (2008-07-01), Mahajani
patent: 2007/0141257 (2007-06-01), Takahashi et al.
patent: 2001-203198 (2001-07-01), None
patent: 2002-151489 (2002-05-01), None
patent: 2003-209110 (2003-07-01), None
patent: 2003-347297 (2003-12-01), None
patent: 2004-079753 (2004-03-01), None
patent: 2005-045166 (2005-02-01), None
Y. Okuyama et al., “Batch process for atomic layer deposition of hafnium silicate thin films on 300-mm-diameter silicon substances,” J. Vac. Sci. Technol. A. vol. 23:3, May/Jun. 2005, pp. L1-L3.
M. L. Green et al., “Nucleation and growth of atomic layer deposited HfO2gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2or Si-O-N) underlayers,” Journal of Applied Physics, vol. 92:12, Dec. 2002, pp. 7168-7174.

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