Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-08-22
2000-02-08
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
357 2, H01L 4580
Patent
active
06022813&
ABSTRACT:
There are disclosed a method and apparatus for manufacturing semiconductor devices. The surface of each semiconductor substrate is exposed to cyanide ions (CN.sup.-) in order to reduce the density of interface states at the insulating film/semiconductor interface. For this purpose, the semiconductor substrate is immersed into a cyan compound solution or is exposed to a cyan compound gas, so that cyanide ions (CN.sup.-) are bonded to dangling bonds at the surface of the semiconductor substrates. As a result, the interface states at the insulating film/semiconductor interface can be reduced.
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Kobayashi Hikaru
Yoneda Kenji
Bowers Charles
Japan Science and Technology Corporation
Matsushita Electronics Corporation
Sulsky Martin
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