Method and apparatus for manufacturing polysilicon thin film tra

Details Method and apparatus for manufacturing polysilicon thin film tra Method and apparatus for manufacturing polysilicon thin film tra

1997-09-26

1999-12-14

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438528, 438510, H01L 21425

Patent

active

060017147

ABSTRACT:
The present invention proves a method and apparatus for manufacturing a polysilicon TFT without a defective activated area in a channel region below a gate. According to the instant invention, a dopant is implanted into a polysilicon thin film formed on an substrate with a gate having a tapered edge which is used as a mask to form a source and a drain. An energy beam then slantingly irradiates from the side of the edge of the gate to the surface of the substrate. Thus, the source and drain are activated and, at the same time, the energy beam streams into the polysilicon thin film below the edge of the gate to activate the channel region implanted the dopant.

REFERENCES:
patent: 5100820 (1992-03-01), Tsbone
patent: 5155369 (1992-10-01), Current
patent: 5223445 (1993-06-01), Fuse
patent: 5372957 (1994-12-01), Liang et al.
patent: 5485019 (1996-01-01), Yamazaki et al.
patent: 5521107 (1996-05-01), Yamazaki et al.
patent: 5750435 (1998-05-01), Pan

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