Method and apparatus for manufacturing active matrix device...

Details Method and apparatus for manufacturing active matrix device... Method and apparatus for manufacturing active matrix device...

2008-03-18

2008-03-18

Coleman, David W. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S722000, C438S800000, C257SE21256

Reexamination Certificate

active

09681643

ABSTRACT:
A method and an apparatus are provided for manufacturing an active matrix device including a top gate type TFT. A manufacturing process of the top gate type TFT includes the steps of forming an oxide film on the inner wall of a CVD processing chamber and arranging a substrate having source and drain electrodes formed thereon in the processing chamber. Additional steps include doping the source and drain electrodes with P, and forming an a-Si layer and a gate insulating film in the processing chamber. Furthermore, an apparatus is provided for manufacturing an active matrix device including a top gate type TFT having the inner surface of the processing chamber coated with the oxide film.

REFERENCES:
patent: 5589233 (1996-12-01), Law et al.
patent: 5788778 (1998-08-01), Shang et al.
patent: 5976900 (1999-11-01), Qiao et al.
patent: 6066519 (2000-05-01), Gardner et al.
patent: 6072193 (2000-06-01), Ohnuma et al.
patent: 6180438 (2001-01-01), Deane et al.

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