Method and apparatus for manufacturing a metal contact with over

Details Method and apparatus for manufacturing a metal contact with over Method and apparatus for manufacturing a metal contact with over

1989-08-07

1990-06-05

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, 156345, 20419235, 20429831, B44C 122, C23F 102, C03C 1500, C03C 2506

Patent

active

049311360

ABSTRACT:
This invention relates to a method and apparatus for manufacturing a metal contact with overhanging upper edges. The metal contact has at least one specific layer tapering away from the surface of a semiconductor layer structure. The metal contact is formed by RIE and mask technology, in which a concavely formed equipotential boundary surface is formed between an anode and a cathode. In a preferred embodiment, the curvature is achieved by selecting the effective areas of the cathode and anode so that their rate is no greater than 3:4.

REFERENCES:
patent: 4253907 (1981-03-01), Parry et al.
patent: 4307283 (1981-12-01), Zajac
patent: 4384938 (1983-05-01), Desilets et al.
patent: 4578559 (1986-03-01), Hijikata et al.
Article entitled "Important Considerations in Selecting Anisotropic Plasma Etching Equipment" by S. Broydo, from Solid State Technology, Apr. 1983.
Article entitled "Reactive-Ion Etching" by Gottlieb S. Dehrlein, from Physics Today, Oct. 1986.
Article entitled "Electrode Separation and Convex Electrode Surfaces in Plasma Etching" from Journal of Vac.Sc. Tech., by K. Eisele, Jul./Aug. 1987.
Article entitled "New Trends and Limits in Plasma Etching" from J. Phys. D.: Appl. Phys. 20 (1987), by Peccoud et al.

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