Method and apparatus for manufacturing a barrier layer of...

Details Method and apparatus for manufacturing a barrier layer of... Method and apparatus for manufacturing a barrier layer of...

2005-08-09

2005-08-09

Wille, Douglas (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S659000

Reexamination Certificate

active

06927163

ABSTRACT:
Disclosed is a method and an apparatus for manufacturing a barrier layer of semiconductor device. The disclosed comprises the steps of: forming an interlayer insulating layer having a contact hole on a semiconductor substrate; forming a Ti layer on the contact hole and on the interlayer insulating layer; and reacting the Ti layer with nitrogen radical to transform a part of the Ti layer into a TiN layer.

REFERENCES:
patent: 5801097 (1998-09-01), Chang
patent: 6146993 (2000-11-01), Brown et al.

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