Method and apparatus for making coplanar...

Details Method and apparatus for making coplanar... Method and apparatus for making coplanar...

2008-07-15

2008-07-15

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257SE21103, C257SE21115, C257SE21461, C257SE21562, C257SE27137

Reexamination Certificate

active

11218198

ABSTRACT:
A semiconductor processing method includes providing a substrate, forming a plurality of semiconductor layers in the substrate, each of the semiconductor layers being distinct and selected from different groups of semiconductor element types, the semiconductor layers comprising first, second, and third semiconductor layers. The method further includes forming a nitride cap layer on the second semiconductor layer prior to forming the third semiconductor layer. Semiconductor structure formed by the above method is also described.

REFERENCES:
patent: 4169000 (1979-09-01), Riseman
patent: 5480832 (1996-01-01), Miura et al.
patent: 6635534 (2003-10-01), Madison
patent: 2002/0006715 (2002-01-01), Chhagan et al.
patent: 2005/0030780 (2005-02-01), Dppe et al.

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