Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-13
2005-12-13
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S677000, C029S025010, C425S403000, C427S098800
Reexamination Certificate
active
06974775
ABSTRACT:
A method and apparatus for making an imprinted conductive circuit using semi-additive plating. A plurality of indented channels is formed on the substrate. The surface is coated with a conductive layer. Portions of the surface other than the indented channels are coated with a non-conductive layer, and metal is plated on the conductive layer in the channels. The non-conductive layer and the first conductive layer are removed from portions of the surface other than the indented channels. In some embodiments, a first set of channels has a first depth and a second set of channels has a second depth. The plating adds a first amount of metal in the first set of channels and the second set of channels. The first set of channels is coated with a non-conductive layer, and a second amount of additional conductive material is plated in the second set of channels.
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Coomer Boyd L.
Keser Milan
Intel Corporation
Schwegman Lundberg Woessner & Kluth P.A.
Smoot Stephen W.
Thompson Craig A.
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