Method and apparatus for maintaining topographical...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S127000, C257S170000, C257S452000, C257S457000

Reexamination Certificate

active

07151302

ABSTRACT:
A semiconductor device includes a memory array having a plurality of non-volatile memory cells. Each non-volatile memory cell of the plurality of non-volatile memory cells has a gate stack. The gate stack includes a control gate and a discrete charge storage layer such as a floating gate. A dummy stack ring is formed around the memory array. An insulating layer is formed over the memory array. The dummy stack ring has a composition and height substantially the same as a composition and height of the gate stack to insure that a CMP of the insulating layer is uniform across the memory array.

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patent: 2005/0023617 (2005-02-01), Schoellkopf et al.
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patent: 2006/0011964 (2006-01-01), Satou

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