Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal
Patent
1996-03-14
2000-10-31
Bowers, Charles
Semiconductor device manufacturing: process
Forming schottky junction
Using platinum group metal
438584, 438685, 438935, 427 99, 4272555, 427251, 427569, 118723E, H01L 2120
Patent
active
06140215&
ABSTRACT:
Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develops between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate to ensure efficient uniform deposition of a film on a substrate surface. In the one embodiment of the present invention the showerhead is bias with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder is isolated from the showerhead such as by a quartz insulator ring to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of quartz material. The RF showerhead utilizes small gas-dispersing holes to further prevent ignition of a plasma within the cylinder. The very small showerhead-to-substrate spacing and the efficient delivery of the plasma and reacting gases produces low temperature CVD and PECVD of films on the substrate.
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Arora Rikhit
Foster Robert F.
Hillman Joseph T.
Bowers Charles
Tokyo Electron Limited
Whipple Matthew
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