Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-02-27
2007-02-27
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S777000, C257S737000, C257SE23021, C257SE23069, C257SE21508, C228S180220
Reexamination Certificate
active
10861030
ABSTRACT:
A method comprising: coating a conductive bump on a first substrate with a conductive material to form a coated conductive bump; coating a conductive bump on a second substrate with a conductive material to form a coated conductive bump; and bonding the coated conductive bump on the first substrate to the coated conductive bump on the second substrate to electrically connect the first substrate to the second substrate.
REFERENCES:
patent: 6127253 (2000-10-01), Roldan et al.
patent: 6177729 (2001-01-01), Benenati et al.
patent: 6495397 (2002-12-01), Kubota et al.
patent: 2002/0070463 (2002-06-01), Chang et al.
patent: 2003/0063452 (2003-04-01), Satonaka
Kim Sarah E.
Ramanathan Shriram
Clark Jasmine
Wheeler Cyndi
LandOfFree
Method and apparatus for low temperature copper to copper... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for low temperature copper to copper..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for low temperature copper to copper... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3824555