Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2005-05-10
2005-05-10
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S150000, C438S166000, C438S378000, C438S487000, C438S795000
Reexamination Certificate
active
06890839
ABSTRACT:
An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample can be achieved because a linear cross-sectional configuration can be created in an optical system with a beam having a Gaussian distribution while areas of strong light intensity are avoided by rotating the beam from a laser light source at a prescribed angle by means of rotating means even when the beam pattern of the beam from the laser light source has a non-uniform intensity distribution.
REFERENCES:
patent: 5888839 (1999-03-01), Ino et al.
patent: 6071796 (2000-06-01), Voutsas
patent: 6117752 (2000-09-01), Suzuki
patent: 6172820 (2001-01-01), Kuwahara
patent: 6190949 (2001-02-01), Noguchi et al.
patent: 6248606 (2001-06-01), Ino et al.
patent: 6341042 (2002-01-01), Matsunaka et al.
patent: 6411906 (2002-06-01), Goto
patent: 6528397 (2003-03-01), Taketomi et al.
patent: 6548830 (2003-04-01), Noguchi et al.
patent: 6580053 (2003-06-01), Voutsas
patent: 2001-127004 (2001-05-01), None
Ishii Mikito
Kawaguchi Norihito
Masaki Miyuki
Nishida Kenichiro
Tanaka Koichiro
Isaac Stanetta
Ishikawajima-Harima Heavy Industries Co. Ltd.
McCormick Paulding & Huber LLP
Niebling John F.
LandOfFree
Method and apparatus for laser annealing configurations of a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for laser annealing configurations of a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for laser annealing configurations of a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3377263