Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-05-01
2007-05-01
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S795000, C257S021000, C117S217000
Reexamination Certificate
active
10319310
ABSTRACT:
Numerous embodiments of a method and apparatus for laser annealing are disclosed. In one embodiment, a method of laser annealing includes performing one or more annealing processes on one or more portions of a semiconductor device, where one or more annealing processes performed on one or more portions of the semiconductor device are varied based at least in part on the particular portion of the semiconductor device being annealed, and/or on one or more desirable characteristics of the particular portion of the semiconductor device being annealed.
REFERENCES:
patent: 5371381 (1994-12-01), Sugahara et al.
patent: 5474940 (1995-12-01), Tsukamoto
patent: 5804471 (1998-09-01), Yamazaki et al.
patent: 6191044 (2001-02-01), Yu et al.
patent: 6214675 (2001-04-01), Cochran et al.
patent: 6300228 (2001-10-01), Adkisson et al.
patent: 6388386 (2002-05-01), Kunii et al.
patent: 6514840 (2003-02-01), Barrett et al.
patent: 6528397 (2003-03-01), Taketomi et al.
patent: 6548830 (2003-04-01), Noguchi et al.
patent: 6723590 (2004-04-01), Zhang et al.
patent: 2001/0018258 (2001-08-01), Yoon
patent: 2003/0040130 (2003-02-01), Mayur et al.
patent: 2003/0060026 (2003-03-01), Yamazaki et al.
Liu Mark Y.
Taylor Mitchell
Blakely , Sokoloff, Taylor & Zafman LLP
Everhart Caridad
Intel Corporation
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