Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-04-21
1999-09-07
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429806, 20429808, 20429811, 20429816, 20429803, C23C 1434
Patent
active
059482150
ABSTRACT:
An ionized physical vapor deposition apparatus is provided with an RF coil that surrounds the space between a target and a substrate holder and is energized with RF energy, preferably in the 0.1 to 60 MHz range, to form a secondary plasma in a volume of the space between the substrate holder and the main plasma that is adjacent the target. A dielectric material, such as a quartz window, either in the wall of the chamber or inside the chamber, or insulation on the coil, protects the coil from adverse interaction with plasma. Shields between the space and the dielectric material prevent sputtered particles from forming a coating on the dielectric material. The shields are partitioned to prevent eddy currents. The shields may be biased to control contamination and may be commonly or individually biased to optimize the uniformity of coating on the substrate and the directionality of the flux of ionized material at the substrate.
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McDonald Rodney G.
Nguyen Nam
Tokyo Electron Limited
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