Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-05-06
2000-06-27
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419212, 20429821, 20429808, 20429806, 20429811, 20429817, 20429815, 20429816, C23C 1434
Patent
active
060802871
ABSTRACT:
Ionized physical vapor deposition (IPVD) is provided by a method of apparatus for sputtering conductive metal coating material from an annular magnetron sputtering target. The sputtered material is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy coupled from a coil located outside of the vacuum chamber behind a dielectric window in the chamber wall at the center of the opening in the sputtering target. Faraday type shields physically shield the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space. The location of the coil in the plane of the target or behind the target allows the target to wafer spacing to be chosen to optimize film deposition rate and uniformity, and also provides for the advantages of a ring-shaped source without the problems associated with unwanted deposition in the opening at the target center.
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Drewery John S.
Licata Thomas J.
Mercado Julian A.
Nguyen Nam
Tokyo Electron Limited
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