Method and apparatus for inspecting semiconductor device

Details Method and apparatus for inspecting semiconductor device Method and apparatus for inspecting semiconductor device

2008-05-06

2008-05-06

Berman, Jack I. (Department: 2881)

Radiant energy

Inspection of solids or liquids by charged particles

Electron probe type

C250S311000, C250S3960ML, C250S397000, C250S399000, C250S492200, C250S492300

Reexamination Certificate

active

07368713

ABSTRACT:
A method and apparatus for inspecting a wafer during a semiconductor device fabrication process. The apparatus performs, only via observation from the wafer's top surface, inspection and quantitative evaluation of a portion that is in the shadow of an incident electron beam and a buried structure in the wafer. To this end, the electron beam is emitted so that it partially penetrates a wafer surface and reaches an unexposed pattern portion to the beam. When a stereoscopic structure is constructed from the scan image based on a secondarily generated signal, generate a stereoscopic model of a pattern being tested. The secondary signal is used to detect position information of a pattern edge(s) and signal intensity. Then, use the information to calculate more than one feature quantity of the test pattern. From the calculated feature quantities, the stereoscopic structure is constructed for displaying a 3D structure of the pattern.

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