Radiant energy – Inspection of solids or liquids by charged particles – Electron probe type
Reexamination Certificate
2008-07-01
2008-07-01
Vanore, David A. (Department: 2881)
Radiant energy
Inspection of solids or liquids by charged particles
Electron probe type
C250S306000, C250S307000, C250S311000, C250S492200, C250S492300
Reexamination Certificate
active
11314020
ABSTRACT:
When the electrode potential of a charge control electrode above a wafer is reduced, image brightness is reduced. A point of change in the image brightness is a switching point between a positively charged state of the image and a negatively charged state of the image, showing the weakly charged state of the image. By setting this point of change as an inspecting condition, the amount of electric charges on the surface of the wafer can be reduced, and stable wafer inspection can be performed. It is estimated that an applied voltage V1in FIG.14corresponds to the point of the change and is roughly included in the voltage range of a region enclosed by a broken line in the vicinity of the applied voltage V1. Within this voltage range, the influence of charge on an inspection under the inspecting condition can be reduced.
REFERENCES:
patent: 5502306 (1996-03-01), Meisburger et al.
patent: 6472663 (2002-10-01), Nagaoki et al.
patent: 6512227 (2003-01-01), Iwabuchi et al.
patent: 6538249 (2003-03-01), Takane et al.
patent: 7045781 (2006-05-01), Adamec et al.
patent: 7049585 (2006-05-01), Nakasuji et al.
patent: 7112792 (2006-09-01), Agemura et al.
patent: 7223975 (2007-05-01), Nara et al.
patent: 2003/0206027 (2003-11-01), Nozoe et al.
patent: 2006/0151700 (2006-07-01), Honda et al.
patent: 2006/0163477 (2006-07-01), Nozoe et al.
patent: 2006/0163480 (2006-07-01), Koyama et al.
patent: 2007/0057183 (2007-03-01), Arai et al.
patent: 03-167456 (1991-07-01), None
patent: 05-258703 (1993-10-01), None
patent: 09-138198 (1997-05-01), None
patent: 10-234543 (1998-09-01), None
Meisburger, W.D. et al.: “Low-voltage electron-optical system for the high-speed inspection of integrated circuits,” Journal of Vacuum Science Technology, B vol. 10, No. 6, 1992, pp. 2804-2808.
Electron and Ion Beams Handbook, The Nikkan Kogyo Shimbun, Ltd., pp. 622-623, Japan.
Meisburger, W.D. et al.: “Requirements and performance of an electron-beam column designed for x-ray mask inspection,” Journal of Vacuum Science Technology, B vol. 9, No. 6, 1991, pp. 3010-3014.
Semiconductor World, Aug. 1995, pp. 96-99, Japan.
Meisburger et al.; “Low-Voltage Electron-Optical System for the High-Speed Inspection of Integrated Circuits”;Journal of Vacuum Science&Technology B; c. 1992; vol. 10, No. 6; Second Series; pp. 2804-2808.
Cheng Zhaohui
Goto Yasunori
Nozoe Mari
Hitachi High-Technologies Corporation
McDermott Will & Emery LLP
Souw Bernard
Vanore David A.
LandOfFree
Method and apparatus for inspecting patterns does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for inspecting patterns, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for inspecting patterns will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3959223