Method and apparatus for inspecting patterns

Radiant energy – Inspection of solids or liquids by charged particles – Electron probe type

Reexamination Certificate

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Details

C250S306000, C250S307000, C250S311000, C250S492200, C250S492300

Reexamination Certificate

active

07394070

ABSTRACT:
When the electrode potential of a charge control electrode above a wafer is reduced, image brightness is reduced. A point of change in the image brightness is a switching point between a positively charged state of the image and a negatively charged state of the image, showing the weakly charged state of the image. By setting this point of change as an inspecting condition, the amount of electric charges on the surface of the wafer can be reduced, and stable wafer inspection can be performed. It is estimated that an applied voltage V1in FIG.14corresponds to the point of the change and is roughly included in the voltage range of a region enclosed by a broken line in the vicinity of the applied voltage V1. Within this voltage range, the influence of charge on an inspection under the inspecting condition can be reduced.

REFERENCES:
patent: 5502306 (1996-03-01), Meisburger et al.
patent: 6472663 (2002-10-01), Nagaoki et al.
patent: 6512227 (2003-01-01), Iwabuchi et al.
patent: 6538249 (2003-03-01), Takane et al.
patent: 7045781 (2006-05-01), Adamec et al.
patent: 7049585 (2006-05-01), Nakasuji et al.
patent: 7112792 (2006-09-01), Agemura et al.
patent: 7223975 (2007-05-01), Nara et al.
patent: 2003/0206027 (2003-11-01), Nozoe et al.
patent: 2006/0151700 (2006-07-01), Honda et al.
patent: 2006/0163477 (2006-07-01), Nozoe et al.
patent: 2006/0163480 (2006-07-01), Koyama et al.
patent: 2007/0057183 (2007-03-01), Arai et al.
patent: 03-167456 (1991-07-01), None
patent: 05-258703 (1993-10-01), None
patent: 09-138198 (1997-05-01), None
patent: 10-234543 (1998-09-01), None
Meisburger, W.D. et al.: “Low-voltage electron-optical system for the high-speed inspection of integrated circuits,” Journal of Vacuum Science Technology, B vol. 10, No. 6, 1992, pp. 2804-2808.
Electron and Ion Beams Handbook, The Nikkan Kogyo Shimbun, Ltd., pp. 622-623, Japan.
Meisburger, W.D. et al.: “Requirements and performance of an electron-beam column designed for x-ray mask inspection,” Journal of Vacuum Science Technology, B vol. 9, No. 6, 1991, pp. 3010-3014.
Semiconductor World, Aug. 1995, pp. 96-99, Japan.
Meisburger et al.; “Low-Voltage Electron-Optical System for the High-Speed Inspection of Integrated Circuits”;Journal of Vacuum Science&Technology B; c. 1992; vol. 10, No. 6; Second Series; pp. 2804-2808.

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