Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-08-21
2007-08-21
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Testing
C365S200000
Reexamination Certificate
active
11330492
ABSTRACT:
Apparatus for repairing one or more shorted memory cells in a memory circuit includes control circuitry. The control circuitry is operative in one of at least a first mode and a second mode. In the first mode, the control circuitry is operative to apply a first signal to a selected memory cell in the memory circuit for reading a logic state of the selected memory cell and to determine whether or not the selected memory cell is shorted. In the second mode, the control circuitry is operative to apply a second signal to a selected memory cell which has been determined to be shorted for initiating a repair of the selected memory cell, the second signal being greater in magnitude than the first signal.
REFERENCES:
patent: 6219280 (2001-04-01), Naganawa
patent: 6452836 (2002-09-01), Roohparvar
patent: 6477081 (2002-11-01), Poechmueller
patent: 6584589 (2003-06-01), Perner et al.
patent: 6839275 (2005-01-01), Van Brocklin et al.
patent: 2002/0003727 (2002-01-01), Hartmann
patent: 2002/0048191 (2002-04-01), Ikehashi et al.
patent: 2005/0169095 (2005-08-01), Bedeschi et al.
Lamorey Mark Curtis Hayes
Lu Yu
Nowak Janusz Jozef
International Busniess Machines Corporation
Nguyen Tan T.
Ryan & Mason & Lewis, LLP
LandOfFree
Method and apparatus for increasing yield in a memory circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for increasing yield in a memory circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for increasing yield in a memory circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3836026