Method and apparatus for increasing uniformity in ion mill...

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C204S192320, C204S298320, C204S298360

Reexamination Certificate

active

07846305

ABSTRACT:
A method for increasing etch depth uniformity in ion milling process in a wafer manufacturing process encompasses loading designated regions of a production pallet with carriers containing wafers to be ion milled. These designated regions have been predetermined to exhibit similar and preferred depths of etching. Non-designated regions of the production pallet are then loaded with dummy carriers and the wafers are ion milled.

REFERENCES:
patent: 4384938 (1983-05-01), Desilets et al.
patent: 4810322 (1989-03-01), Gut et al.
patent: 5248371 (1993-09-01), Maher et al.
patent: 5515219 (1996-05-01), Ihrke et al.
patent: 5936800 (1999-08-01), Harris
patent: 6132632 (2000-10-01), Haney et al.
patent: 6423240 (2002-07-01), Wang et al.
patent: 6485990 (2002-11-01), Lansford
patent: 04-079220 (1992-03-01), None
patent: 04-096326 (1992-03-01), None
patent: 08-008230 (1996-01-01), None
patent: 10-012863 (1998-01-01), None
patent: 2001-007013 (2001-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for increasing uniformity in ion mill... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for increasing uniformity in ion mill..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for increasing uniformity in ion mill... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4189457

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.