Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-11-12
2000-09-12
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429806, 20429808, 20429811, D06F 2900
Patent
active
061172790
ABSTRACT:
An ionized physical vapor deposition method and apparatus are provided which employs a magnetron magnetic field produced by cathode magnet structure behind a sputtering target to produce a main sputtering plasma, and an RF inductively coupled field produced by an RF coil outside of and surrounding the vacuum of the chamber to produce a secondary plasma in the chamber between the target and a substrate to ionize sputtered material passing from the target to the substrate so that the sputtered material can be electrically or magnetically steered to arrive at the substrate at right angles. A circumferentially interrupted shield or shield structure in the chamber protects the window from material deposits. A low pass LC filter circuit allows the shield to float relative to the RF voltage but to dissipate DC potential on the shield. Advantages provided are that loss of electrons and ions from the secondary plasma is prevented, preserving plasma density and providing high ionization fraction of the sputtered material arriving at the substrate.
REFERENCES:
patent: 5556501 (1996-09-01), Collins et al.
patent: 5665167 (1997-09-01), Deguchi et al.
patent: 5800688 (1998-09-01), Lantsman et al.
European Patent Office, PCT Search Report, PCT Application No. PCT/IB99/01764.
Caldwell Doug
Gittleman Bruce
Licata Thomas J.
Smolanoff Jason
Zibrida Jim
Nguyen Nam
Tokyo Electron Limited
VerSteeg Steven H.
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