Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-20
2008-05-20
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257SE27081, C438S237000
Reexamination Certificate
active
07375402
ABSTRACT:
In deep submicron memory arrays there is noted a relatively steady on current value and, therefore, threshold values of the transistors comprising the memory cell are reduced. This, in turn, results in an increase in the leakage current of the memory cell. With the use of an ever increasing number of memory cells leakage current must be controlled. A method and apparatus using a dynamic threshold voltage control scheme implemented with no more than minor changes to the existing MOS process technology is disclosed. The disclosed invention controls the threshold voltage of MOS transistors. Methods for enhancing the impact of the dynamic threshold control technology using this apparatus are also included. The invention is particularly useful for SRAM, DRAM, and NVM devices.
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Budd Paul
Glenn Michael A.
Glenn Patent Group
Jackson Jerome
Semi Solutions, LLC
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