Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
2011-04-12
2011-04-12
McDonald, Rodney G (Department: 1724)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C204S298030, C204S298080, C204S298140, C118S7230ER, C118S7230ER, C156S345430, C156S345440, C156S345450
Reexamination Certificate
active
07922880
ABSTRACT:
Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.
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Dulkin Alexander
Hayden Douglas B.
Kinder Ronald L.
Pradhan Anshu A.
McDonald Rodney G
Novellus Systems Inc.
Weaver Austin Villeneuve & Sampson LLP
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