Method and apparatus for in-situ monitoring of thickness using a

Details Method and apparatus for in-situ monitoring of thickness using a Method and apparatus for in-situ monitoring of thickness using a

1997-05-28

2000-08-29

Evans, F. L.

Optics: measuring and testing

With plural diverse test or art

356381, 25055927, G01B 1106

Patent

active

061116343

ABSTRACT:
A method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity. The film thickness monitor comprises a spectrometer.

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