Method and apparatus for in-situ and on-line monitoring of trenc

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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1566271, 1566451, 1566431, H01L 21302

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active

055781616

ABSTRACT:
An apparatus (20) for monitoring the trench formation process in a silicon wafer on a full in-situ and on-line basis. The apparatus includes two spectrometers (30A, 30B) for viewing the plasma used in the trench etching process at zero and normal angles of incidence with respect to the plane of the wafer, respectively. Both spectrometers are tuned to detect the radiation associated with a selected specie present in the plasma. Based on information contained in the output signals of the spectrometers, the depth D of the trench and the thickness Th and rate of deposition of the redeposited SiO.sub.2 layer are computed in real time. When the computed depth D matches a final depth of parameter, the trench formation process is terminated.

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K. J. Cooper et al., "Physical and Electrical Characteristics of Submicron Trench Capacitors," 1046b Extended Abstracts, Fall Mtg., Seattle, WA, Oct. 14, 1990, pp. 410-411.
Patent Abstracts of Japan, vol. 10, No. 117 (E-400), May 02, 1986, (JP-A-60 253228, Dec. 13, 1985).
Patent Abstracts of Japan, vol. 8, No. 127 (E-250), Jun. 14, 1984, (JP-A-59 040534, Mar. 6, 1984).

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