Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-08-16
2005-08-16
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S045013, C372S050121
Reexamination Certificate
active
06931044
ABSTRACT:
A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures.
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Bour David P.
Chang Ying-Lan
Tan Michael R. T.
Agilent Technologie,s Inc.
Flores-Ruiz Delma R.
Harvey Minsun Oh
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