Substrate pump ESD protection for silicon-on-insulator...

Details Substrate pump ESD protection for silicon-on-insulator... Substrate pump ESD protection for silicon-on-insulator...

2005-08-23

2005-08-23

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000, C257S360000, C257S361000, C257S362000

Reexamination Certificate

active

06933567

ABSTRACT:
An electrostatic discharge (ESD) protection device formed in the semiconductor layer of a semiconductor-on-insulator device, wherein the semiconductor layer has first and second wells. A discharge circuit is formed in the first well, operable to discharge the ESD pulse to ground. A pump circuit is formed in the second well, operable to use a portion of an ESD pulse's voltage to pump current into the first well for allowing the discharge circuit to turn on uniformly. The discharge circuit has a plurality of body nodes to the first well. The pump circuit comprises an input pad for receiving a portion of the ESD pulse's voltage; an MOS transistor having source, gate and drain; a capacitor connected between the input pad and the gate, whereby a rising input voltage pulls the gate transiently high for pumping current into the first well; the source is connected to the body nodes of the discharge circuit, and the drain connected to the input pad.

REFERENCES:
patent: 5698886 (1997-12-01), Thenoz et al.
patent: 5708288 (1998-01-01), Quigley et al.
patent: 5726844 (1998-03-01), Smith
patent: 5811857 (1998-09-01), Assaderaghi et al.
patent: 6369994 (2002-04-01), Voldman
patent: 2002/0060343 (2002-05-01), Gauthier et al.

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