Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-04-10
2010-02-23
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S199000, C438S275000, C257SE21632
Reexamination Certificate
active
07666720
ABSTRACT:
A method of forming a current mirror device for an integrated circuit includes configuring a reference current source; forming a first field effect transistor (FET) in series with the reference current source, the first FET of a first conductivity type formed on a first portion of a substrate having a first crystal lattice orientation; and forming a second FET of the first conductivity type on a second portion of the substrate having a second crystal lattice orientation, with a gate terminal of the first FET coupled to a gate terminal of the second FET, and the gate terminals of the first and second FETs coupled to the reference current source; wherein the carrier mobility of the first FET formed on the first portion of the substrate is different than the carrier mobility of the second FET formed on the second portion of the substrate.
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Pekarik John J.
Wang Xudong
Cantor & Colburn LLP
International Business Machines - Corporation
LeStrange Michael
Trinh Michael
LandOfFree
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